| 发明名称 |
METHOD FOR FABRICAING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve an operation current of a device by increasing mobility of a carrier hole by applying compressive stress to a channel. CONSTITUTION: A plurality of gate patterns(12) is formed on a substrate(11). An epitaxial silicon germanium layer is formed on a source/drain region of the substrate. Carbon is tilt-ion-implanted to the epitaxial silicon germanium layer.</p> |
| 申请公布号 |
KR20100038631(A) |
申请公布日期 |
2010.04.15 |
| 申请号 |
KR20080097674 |
申请日期 |
2008.10.06 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN, TAE HANG;JEON, SEUNG JOON;LEE, YOUNG HO |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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