| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus improving transmittance of light in a transparent insulation film on a light entering surface side of a substrate, and having a dark current suppressing function and a quantum efficiency loss prevention function, in a back face irradiation type solid-state imaging apparatus. Ž<P>SOLUTION: On the back face of a semiconductor substrate 1 with a light reception part 4 formed thereon, a silicon oxide film 8 and a silicon nitride film 9 are laminated. Negative charge (electrons) is stored in an interface between the silicon oxide film 8 and the silicon nitride film 9 or in the silicon nitride film 9. By the negative charge, a hole storage layer 10 is induced in the vicinity of the back face in the semiconductor substrate 1. The silicon oxide film 8 has a thickness of 15-40 nm, and the silicon nitride film 9 has a thickness of 20-50 nm. By multiple interference effect of light using a laminated film of the silicon oxide film 8 and the silicon nitride film 9, transmittance for incident light is improved relative to the case where the silicon oxide film 8 is used alone. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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