发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To precisely measure characteristics deterioration of MOSFET by a comparatively simple circuit configuration. Ž<P>SOLUTION: A semiconductor integrated circuit includes: a first ring oscillator 11 to which a stress voltage is applied; a second ring oscillator 12 to which the stress voltage is not applied; and a phase comparator 13 that receives the outputs of the first ring oscillator and second ring oscillator and compare the phases thereof. The first ring oscillator 11 includes a switching circuit 110 that switches a first connection status where a predetermined node of the second ring oscillator and that of the first ring oscillator are connected after disconnecting a ring connection of the first ring oscillator and a second connection status where the first ring oscillator is ring-connected after disconnecting the connection of the first ring oscillator and the second ring oscillator. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010087275(A) 申请公布日期 2010.04.15
申请号 JP20080255236 申请日期 2008.09.30
申请人 PANASONIC CORP 发明人 SUMIDA MASAYA;FUJIMOTO KEIICHI
分类号 H01L21/822;G01R31/28;H01L27/04 主分类号 H01L21/822
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