发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To precisely measure characteristics deterioration of MOSFET by a comparatively simple circuit configuration. Ž<P>SOLUTION: A semiconductor integrated circuit includes: a first ring oscillator 11 to which a stress voltage is applied; a second ring oscillator 12 to which the stress voltage is not applied; and a phase comparator 13 that receives the outputs of the first ring oscillator and second ring oscillator and compare the phases thereof. The first ring oscillator 11 includes a switching circuit 110 that switches a first connection status where a predetermined node of the second ring oscillator and that of the first ring oscillator are connected after disconnecting a ring connection of the first ring oscillator and a second connection status where the first ring oscillator is ring-connected after disconnecting the connection of the first ring oscillator and the second ring oscillator. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010087275(A) |
申请公布日期 |
2010.04.15 |
申请号 |
JP20080255236 |
申请日期 |
2008.09.30 |
申请人 |
PANASONIC CORP |
发明人 |
SUMIDA MASAYA;FUJIMOTO KEIICHI |
分类号 |
H01L21/822;G01R31/28;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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