发明名称 |
Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
摘要 |
A cross point memory array includes a structure in which holes are formed in an insulating layer and a storage node is formed in each of the holes. The storage node may include a memory resistor and a switching structure. The master for an imprint process used to form the cross-point memory array includes various pattern shapes, and the method of manufacturing the master uses various etching methods.
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申请公布号 |
US2010090191(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20090588107 |
申请日期 |
2009.10.05 |
申请人 |
LEE BYUNG-KYU;LEE DU-HYUN;LEE MYOUNG-JAE |
发明人 |
LEE BYUNG-KYU;LEE DU-HYUN;LEE MYOUNG-JAE |
分类号 |
H01L47/00;B29C59/02;B44C1/22;H01L21/34 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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