HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELECTRIC MATERIAL DURING FABRICATION OF TRANSISTORS

摘要

By providing a high-k dielectric etch stop material as an etch stop layer for patterning an interlayer dielectric material, enhanced performance and higher flexibility may be achieved since, for instance, an increased amount of highly stressed dielectric material may be positioned more closely to the respective transistors due to the reduced thickness of the high-k dielectric etch stop material.