发明名称 |
NONVOLATILE MEMORY ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF |
摘要 |
A lower electrode (22) is provided on a semiconductor chip substrate (26). A lower electrode (22) is covered with a first interlayer insulating layer (27) from above. A first contact hole (28) is provided on the lower electrode (22) to penetrate through the first interlayer insulating layer (27). A low-resistance layer (29) forming the resistance variable layer (24) is embedded to fill the first contact hole (28). A high-resistance layer (30) is provided on the first interlayer insulating layer (27) and the low-resistance layer (29). The resistance variable layer (24) is formed by a multi-layer resistance layer including a single layer of the high-resistance layer (30) and a single layer of the low-resistance layer (29). The low-resistance layer (29) forming the memory portion (25) is isolated from at least its adjacent memory portion (25).
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申请公布号 |
US2010090193(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20070445380 |
申请日期 |
2007.10.12 |
申请人 |
MIKAWA TAKUMI;TAKAGI TAKESHI;KAWASHIMA YOSHIO;ARITA KOJI |
发明人 |
MIKAWA TAKUMI;TAKAGI TAKESHI;KAWASHIMA YOSHIO;ARITA KOJI |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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