| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a gate-insulated semiconductor device, in which a transistor cell cannot be disposed because a protection diode is disposed at a lower portion of a gate pad so that the lower portion has been an invalid region on a chip, and a current path is formed so that the gate pad is bypassed from a source pad in cells at the edge of an element region while a source electrode layer is disposed excluding the gate pad. SOLUTION: In the semiconductor device, an electrode structure is formed in two layers, and a region without overlapping with a protection diode Di is formed at least at one portion of a gate pad. The second-layer gate electrode layer partially overlaps with the first-layer gate electrode layer 18, and is connected to the protection diode and the gate electrode via the first-layer gate electrode layer. The cell and the first-layer source electrode layer 17 can be disposed at a lower portion of the non-overlapped region, thereby the invalid region at a lower portion of the gate pad can be greatly reduced as compared with before. For current flowing in the source electrode layer in a horizontal direction to the substrate, all cells become current paths of the shortest distance from the source pad. COPYRIGHT: (C)2010,JPO&INPIT |
