| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming an insulating coating to a semiconductor which can also cope with the formation of a thick insulating coating by a chemical oxidation film forming method, and also a method of manufacturing a semiconductor device using the coating forming method. <P>SOLUTION: The formation of an insulating coating and the manufacturing of a semiconductor device using the coating formation can be achieved in a practical short time by a method of chemically forming a thick silicon oxide film 4 on a silicon substrate 1 to be treated by immersing a base material for coating formation containing a silicon oxide in its surface, silicon, or a solid containing silicon or a solid coated with a film containing silicon into an oxidizing solution, and heating the oxidizing solution at a temperature not higher than the boiling point of the oxidizing solution to form a dense silicon oxide film on the base material. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
