| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve processability in the etching process of a polycrystal silicon film having a high aspect ratio. Ž<P>SOLUTION: A gate insulating film 4 is formed on the upper surface of a silicon substrate 1. On the upper surface of this film, a processing object film formed of a laminating film of a gate electrode constituted with polycrystal silicon films 5, 7 and an electrode-to-electrode insulating film 6 is further formed. On the upper surface of this film, moreover, a silicon nitride film 8 and an aluminum oxide film 9 functioning as hard masks are laminated. The silicon nitride film 10 corresponding to the existing film contributes to reduction in thickness of the hard mask in comparison with the hard mask formed of single layer. Therefore, the final processing width C1 can be reduced for C2 in comparison with a pattern width A in lithography and thereby a process conversion difference can be reduced. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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