| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon wafer capable of extinguishing a Grown-in defect on a surface layer where a device is formed. Ž<P>SOLUTION: A surface layer of a silicon wafer obtained by subjecting a silicon single-crystal ingot pulled by a Czochralski method to wafer processing is irradiated with high-energy light such as laser light or lamp light, and only the surface layer is melted (melting process). As a result, a Grown-in defect present on the surface layer of the silicon wafer and caused by crystal pulling can be extinguished. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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