LATERAL JUNCTION FIELD-EFFECT TRANSISTOR

摘要

On a p− epitaxial layer, an n-type epitaxial layer and a gate region are formed in this order. A gate electrode is electrically connected to the gate region, and a source electrode and a drain electrode are spaced apart from each other with the gate electrode sandwiched therebetween. A control electrode is used for applying to the p− epitaxial layer a voltage that causes a reverse biased state of the p− epitaxial layer and the n-type epitaxial layer in an OFF operation.