发明名称 Complementary Alignment Marks for Imprint Lithography
摘要 Systems and methods for minimizing overlay error during alignment of a template with a substrate are described. Templates generally include two distinct types of alignment marks: buried alignment marks and complementary alignment marks. Buried marks may be fabricated separately from the patterning surface, and the complementary marks may be fabricated in the same step as the patterning surface.
申请公布号 US2010092599(A1) 申请公布日期 2010.04.15
申请号 US20090575834 申请日期 2009.10.08
申请人 MOLECULAR IMPRINTS, INC. 发明人 SELINIDIS KOSTA S.;SCHMID GERARD M.;THOMPSON ECRON D.;MCMACKIN IAN MATTHEW;RESNICK DOUGLAS J.
分类号 B29C59/00 主分类号 B29C59/00
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