A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type Il band alignment. A method for fabricating such a device is also provided.
申请公布号
WO2009049087(A3)
申请公布日期
2010.04.15
申请号
WO2008US79412
申请日期
2008.10.09
申请人
THE REGENTS OF THE UNIVERSITY OF MICHIGAN;THE TRUSTEES OF PRINCETON UNIVERSITY;FORREST, STEPHEN, R.;WEI, GUADAN;SHIU, KUEN-TING