| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to reduce a process time and costs by forming a hard mask through one deposition process. CONSTITUTION: A hard mask material layer is formed on the upper side of a semiconductor substrate(100). A hard mask(112A) exposes a trench region(120) of the semiconductor substrate by patterning a hard mask material layer. An ion(130) is inserted into the front side of the hard mask, including the exposed trench region. A trench is formed by etching the semiconductor substrate using the hard mask as an etching mask. The hard mask is removed.
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