发明名称 END-FACE EMISSION TYPE SEMICONDUCTOR LASER, AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER ARRAY
摘要 <P>PROBLEM TO BE SOLVED: To provide an end-face emission type semiconductor laser including an external reflective mirror allowing a 45° mirror arranged oppositely to an end face of a resonator on the laser beam emitting side to be provided in the same process without adding it in a post-process. Ž<P>SOLUTION: A method of manufacturing this end-face emission type semiconductor laser including a resonator formed by using a pair of reflective mirrors and a plurality of layers laminated on a surface of a substrate and including an active layer, and a reflective surface arranged at a position facing an end face of the resonator including an emission surface for emitting a laser beam for reflecting the laser beam, and used for reflecting the laser beam by the reflective surface to be output includes processes of: forming a groove by using etching in a direction forming an elevation angle with respect to the surface of the substrate from the upper surface of the plurality of laminated layers including the active layer and forming a wall surface constituting the groove into the reflective surface; and making impact waves generated by laser irradiation in a liquid act on a wall surface side of the groove opposite to the above wall surface to partially cleave the plurality of layers to expose the emission surface from the end face. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010087356(A) 申请公布日期 2010.04.15
申请号 JP20080256491 申请日期 2008.10.01
申请人 CANON INC 发明人 SAI HIRONOBU
分类号 H01S5/00 主分类号 H01S5/00
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