发明名称 |
Nonvolatile Memory Devices Having Built-in Memory Cell Recovery During Block Erase and Methods of Operating Same |
摘要 |
Nonvolatile memory devices include support memory cell recovery during operations to erase blocks of nonvolatile (e.g., flash) memory cells. A nonvolatile memory system includes a flash memory device and a memory controller electrically coupled to the flash memory device. The memory controller is configured to control memory cell recovery operations within the flash memory device by issuing a first instruction(s) to the flash memory device that causes erased memory cells in the block of memory to become at least partially programmed memory cells and then issuing a second instruction(s) to the flash memory device that causes the at least partially programmed memory cells become fully erased.
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申请公布号 |
US2010091578(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20090498508 |
申请日期 |
2009.07.07 |
申请人 |
KIM YONG-JUNE;KIM JAE-HONG;CHO KYOUNG-LAE;SONG SEUNG-HWAN;KONG JUN-JIN |
发明人 |
KIM YONG-JUNE;KIM JAE-HONG;CHO KYOUNG-LAE;SONG SEUNG-HWAN;KONG JUN-JIN |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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