发明名称 METHOD FOR FABRICATING CAPACITOR
摘要 PURPOSE: A method for manufacturing a capacitor is provided to improve a leakage current property of a capacitor by reducing a carbon element inside a thin film. CONSTITUTION: A bottom electrode is formed on the upper side of the semiconductor substrate. A dielectric layer is stacked by depositing a chemical oxide(12), an aluminum oxide or hafnium oxide layer on the upper side of the bottom electrode. A top electrode(18) is formed on the upper side of the dielectric layer.
申请公布号 KR20100039313(A) 申请公布日期 2010.04.15
申请号 KR20100017960 申请日期 2010.02.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JONG BUM;KIL, DEOK SIN
分类号 H01L27/04 主分类号 H01L27/04
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