发明名称 |
METHOD FOR FABRICATING CAPACITOR |
摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to improve a leakage current property of a capacitor by reducing a carbon element inside a thin film. CONSTITUTION: A bottom electrode is formed on the upper side of the semiconductor substrate. A dielectric layer is stacked by depositing a chemical oxide(12), an aluminum oxide or hafnium oxide layer on the upper side of the bottom electrode. A top electrode(18) is formed on the upper side of the dielectric layer.
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申请公布号 |
KR20100039313(A) |
申请公布日期 |
2010.04.15 |
申请号 |
KR20100017960 |
申请日期 |
2010.02.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK, JONG BUM;KIL, DEOK SIN |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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