METHOD FOR FORMATION OF CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve reliability by forming a conformal dielectric layer on the lower electrode. CONSTITUTION: A hole is formed inside a mold layer on a semiconductor substrate. The first conductive layer is formed on the semiconductor substrate including a hole. A first layer(132) is formed on the only lower side of the hole on the first conductive layer. A second conductive layer is formed on the semiconductor substrate to cover the first film. A first conductive layer and a second conductive layer are left inside the hole. The first and second conductive layers are removed on the mold layer. The exposed mold layer is removed with the first conductive layer and the second conductive layer. A dielectric layer(134) are formed on the exposed first and second conductive layers. A third conductive layer(135) is formed on the dielectric layer.