| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND type flash memory which prevents an unselected block from being erased by mistake. <P>SOLUTION: A NAND type flash memory for erasing data for each block includes: a plurality of memory cell transistors that are provided for each block and have floating gates formed through a first gate insulating film above a well formed in a semiconductor substrate and control gates formed through a second gate insulating film above the floating gates, and rewrite data by controlling the amount of charge accumulated in the floating gates; a plurality of MOS transistors wherein drains are connected to corresponding word lines connected to the control gates of a plurality of the memory cell transistors; and a row decoder controlling gate and source voltages of the MOS transistors. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
