| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for etching to be used for industrial etching of silicon nitride without giving any damage on silicon oxide and without using highly purified phosphoric acid. SOLUTION: A composition containing sulfuric acid, boron compound, and water is used to etch silicon nitride. In this case, it is further preferable that the composition contains a silicon compound. COPYRIGHT: (C)2010,JPO&INPIT
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