SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD OF THE SAME, AND ELECTRONIC INFORMATION EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To simplify a production process and to reduce a production cost in a solid-state imaging device by commonizing the formation of the diffusion layer of an charge transfer unit and the formation of the diffusion layer of a transistor composing an output unit in the periphery. SOLUTION: The solid-state imaging device includes a plurality of photoelectric conversion elements PD for converting an incident light to a signal charge, a vertical CCD 120 for transferring the signal charge Sc generated by the photoelectric conversion elements PD in the vertical direction, a horizontal CCD 110 for transferring the signal charge transferred from the vertical CCD 120 to the horizontal direction, an output unit for outputting the signal charge transferred from the horizontal CCD 110 by converting it to a signal voltage Sv, wherein the diffusion layer 111c of an NMOS transistor in an output amplifier 130a composing the output unit is structured to have the same impurity diffusion profile as a specific diffusion layer 111b composing the horizontal CCD 110 and to be placed in the same depth position in the same board as the specific diffusion layer 111b. COPYRIGHT: (C)2010,JPO&INPIT