| 摘要 |
PROBLEM TO BE SOLVED: To reliably eliminate a corner part or shoulder part of a side wall near an opening of a through via in dry etching for forming the through via in a substrate having an Si layer and an SiO<SB>2</SB>layer as a base layer. SOLUTION: The substrate 7 includes at least the Si layer 21, the SiO<SB>2</SB>layer 22, and a photoresist mask 24. The through via 31 penetrating the Si layer 21 is formed through dry etching using a mixed gas containing at least SF<SB>6</SB>and O<SB>2</SB>. Then the photoresist mask 24 is removed by ashing. Further, the SiO<SB>2</SB>layer 22 is dry-etched using a gas containing a fluorocarbon-based gas having a high C/F ratio, so that the through via 31 penetrates the SiO<SB>2</SB>layer 22. COPYRIGHT: (C)2010,JPO&INPIT
|
