| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of eliminating a process of polishing a separation bond substrate in regenerating a separation bond substrate after a semiconductor film is separated therefrom to a regenerated bond substrate usable for manufacturing an SOI substrate. Ž<P>SOLUTION: In a cycle including a manufacturing process of an SOI substrate and a regeneration processing process of a separation bond substrate, the SOI substrate is manufactured using a bond substrate where the thickness of a peripheral part of the substrate is smaller than that in a central part thereof due to edge roll-off or the like, and a separation bond substrate is regenerated to a regenerated bond substrate with a projecting part formed in a peripheral part of the substrate by polishing by a CMP method at a low polishing rate in a regeneration processing process. Since the height of the projecting part is smaller than that of the central part, the regenerated bond substrate can be used as a bond substrate again. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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