| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of sufficiently securing the accuracy of aligning a portion formed on one surface of a semiconductor substrate with a portion formed on the other surface. Ž<P>SOLUTION: An IGBT element 20 and a FWD element 30 are formed in the same semiconductor substrate of the semiconductor device 10. The method includes a first step of forming a trench 40 of a prescribed depth filled up with a filling material 41 on one surface of the semiconductor substrate, a second step of forming a part of the element on the one surface, by using one end surface 40a of the trench 40 as an alignment mark, a third step of thinning the other surface of the semiconductor substrate to expose the other end surface 40b of the trench 40, and a fourth step of forming the residue of the part constituting the element on the other surface, by using the other end surface 40b of the trench 40 as the alignment mark. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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