发明名称 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus obtaining a physically vapor-deposited film of the desired characteristic by irradiating a plurality of evaporation sources comprising a plurality of different materials with plasma beams from a plurality of pressure-gradient type Ar plasma guns. SOLUTION: Each of the plurality of evaporation sources comprising the plurality of different materials is irradiated with plasma beams from the plurality of pressure-gradient type Ar plasma guns for evaporation, the evaporation sources are evaporated and converted into plasma as particles, and a physically vapor-deposited film is deposited on a surface of a substrate, which includes the desired component composition, uniformity, crystal form, adhesiveness, strength, hardness or the like. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010084153(A) 申请公布日期 2010.04.15
申请号 JP20080223238 申请日期 2008.09.01
申请人 MITSUBISHI MATERIALS CORP 发明人 TAKAOKA HIDEMITSU;MAYUZUMI YOSHIAKI
分类号 C23C14/32 主分类号 C23C14/32
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