发明名称 SILICON POLYCRYSTAL AND PRODUCING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To solve such problems that the generation efficiency of silicon is extremely low, silicon carbide cannot be sufficiently removed from generated silicon and the like although a method for producing silicon being a raw material for a solar cell by the reaction of quartz and carbon with arc discharge is known conventionally as a method for reducing the production cost of the solar cell. Ž<P>SOLUTION: Silicon is generated from waste silicon as a raw material with arc discharge. High purity silicon can be produced with high generation efficiency because the raw material is silicon. As silicon carbide being an impurity can be removed by using a member comprising carbon for a part of a furnace body in an arc furnace, the content of silicon carbide in the generated silicon can be sufficiently reduced. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010083686(A) 申请公布日期 2010.04.15
申请号 JP20080251833 申请日期 2008.09.29
申请人 FUKUDA CRYSTAL LABORATORY 发明人 FUKUDA TSUGUO;INOUE KEIJI
分类号 C01B33/02 主分类号 C01B33/02
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