发明名称 VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM
摘要 A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
申请公布号 WO2010019007(A3) 申请公布日期 2010.04.15
申请号 WO2009KR04528 申请日期 2009.08.13
申请人 SYNOS TECHNOLOGY, INC.;LEE, SANG IN 发明人 LEE, SANG IN
分类号 H01L21/205 主分类号 H01L21/205
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