| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve GIDL deterioration by forming a gate insulation layer with a thicker part in contact with a source and a drain. CONSTITUTION: A recess pattern is formed by selectively etching a substrate. An oxide catalyst film is formed on the sidewall of the recess pattern. A gate insulation layer is formed along the step of the overall structure including the recess pattern by performing an oxidation process. The recess pattern is buried in the gate insulation layer and the others except the recess pattern are protruded to the upper side of the substrate in a gate pattern.</p> |
