发明名称 |
SEMICONDUCTOR STRUCTURE WITH ONE OR MORE THROUGH-HOLES |
摘要 |
Double-sided etching techniques are disclosed for providing a semiconductor structure with one or more through-holes. The through-holes may be sealed hermetically such as by a feed-through metallization process. The feed-through metallization process may include using an electroplating technique and may provide electrical contact to an opto-electronic or integrated circuit encapsulated in a package with the semiconductor structure used as a lid. |
申请公布号 |
EP1436837(B1) |
申请公布日期 |
2010.04.14 |
申请号 |
EP20020787490 |
申请日期 |
2002.10.15 |
申请人 |
HYMITE A/S |
发明人 |
HESCHEL, MATTHIAS |
分类号 |
G02B6/122;H01L23/48;G02B6/42;H01L21/768;H01L23/02;H01L23/38;H01L23/52;H01L31/0203 |
主分类号 |
G02B6/122 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|