发明名称 |
Resist composition and patterning process |
摘要 |
<p>A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.</p> |
申请公布号 |
EP1783551(B1) |
申请公布日期 |
2010.04.14 |
申请号 |
EP20060255573 |
申请日期 |
2006.10.30 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TAKEDA, TAKANOBU;WATANABE, OSAMU;MANBA, DAISUKE;KANEDA, TSUGIO |
分类号 |
G03F7/039 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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