| 摘要 |
<p>A method of fabricating an electronic device comprising a thin-film transistor, which addresses a problem of increased off-state current and reduced carrier mobility in self-aligned thin-film transistors. According to the method, a gate layer (<HIL><PDAT>2,46</BOLD><PDAT>) is etched back underneath a mask layer (<HIL><PDAT>20,48</BOLD><PDAT>). Following an implantation step using the mask layer as an implantation mask, the etch-back exposes implant damage which is then annealed by an energy beam (<HIL><PDAT>42</BOLD><PDAT>).</PTEXT></p> |
| 申请人 |
TPO HONG KONG HOLDING LIMITED |
发明人 |
YOUNG, NIGEL, D.;AYRES, JOHN, R., A.;BROTHERTON, STANLEY, D.;FISHER, CAROLE, A.;ROHLFING, FRANK, W. |
