发明名称
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that can halve the damage or break due to ambient temperature change or stress in comparison with conventional devices, even when the expansion coefficients of semiconductor device, interposer without core and printed circuit board are different. SOLUTION: To manufacture this semiconductor device, a semiconductor device 2 is connected to an interposer 1 with a linear expansion coefficient of 16 ppm/°C or more where the semiconductor device is mounted using a solder bump 3 and a filling resin 5 is padded between the above semiconductor device and the interposer, and/or a clearance between the solder bumps for hardening. In this process, the glass transition point temperature of the above filling resin is 100°C to 120°C; the elastic modulus at 125°C is 0.1 GPa or more; and the linear expansion coefficientα1 below the glass transition point is below 30 ppm/°C. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP4449608(B2) 申请公布日期 2010.04.14
申请号 JP20040203222 申请日期 2004.07.09
申请人 发明人
分类号 H01L23/12;H01L21/56;H01L21/60 主分类号 H01L23/12
代理机构 代理人
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