| 摘要 |
PROBLEM TO BE SOLVED: To provide a joining structure for which productivity and reliability at the time of using a product are both excellent in joining using a conductor metal. SOLUTION: The two kinds of electrode lands 21 and 22 are formed for a semiconductor substrate 1, a metal bump 3 is formed so as to be joined to the two kinds of the electrode lands 21 and 22 respectively, and a semiconductor element 5 is loaded on the metal bump 3. The two kinds of the electrode lands 21 and 22 are composed of a first electrode land 21 for which the diffusion property of a metal with the metal bump 3 is high, and a second electrode land 22 for which the diffusion property of the metal with the metal bump 3 is low. |
