发明名称 |
Semiconductor device and method of producing the same |
摘要 |
A semiconductor device includes a first field effect transistor and a second field effect transistor. The first field effect transistor includes a first gate electrode formed; first impurity diffused areas; and first sidewall portions. The first sidewall portions include a first lower insulation film and a first charge accumulation film. The second field effect transistor includes a second gate electrode; second impurity diffused areas; and second sidewall portions. The second sidewall portions include a second lower insulation film and a second charge accumulation film. The first lower insulation film contains one of a silicon thermal oxide film and a non-doped silicate glass, and the second lower insulation film contains a non-doped silicate glass. The second sidewall portions have a width along a gate longitudinal direction larger than that of the first sidewall portions. The second lower insulation film has a thickness larger than that of the first lower insulation film.
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申请公布号 |
US7696084(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20080076054 |
申请日期 |
2008.03.13 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
SAEKI KATSUTOSHI;SATOU YOSHITAKA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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