发明名称 |
Method of manufacturing vertical gallium-nitride based light emitting diode |
摘要 |
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
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申请公布号 |
US7695989(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20090406540 |
申请日期 |
2009.03.18 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
BAIK DOO GO;OH BANG WON;CHOI SEOK BEOM;LEE SU YEOL |
分类号 |
H01L21/00;H01L33/06;H01L33/10;H01L33/22;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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