| 摘要 |
A semiconductor device is provided, which comprises a semiconductor film, a gate insulating film, a gate electrode, an insulating film, and a source and drain electrodes. The semiconductor film includes at least a channel forming region, a region, a source and drain regions disposed between the channel forming region and the region, a first silicide region over the region, and a second silicide region over a portion of the source and drain regions. The insulating film has a contact hole to expose at least the first silicide region. Each of the source and drain electrodes is electrically connected to the first silicide region via the contact hole. The region includes an element imparting one conductivity type at a lower concentration than the source and drain regions.
|
