发明名称 |
Solid state imaging apparatus method for fabricating the same and camera using the same |
摘要 |
A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.
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申请公布号 |
US7696592(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20050571426 |
申请日期 |
2005.06.28 |
申请人 |
PANASONIC CORPORATION |
发明人 |
MORI MITSUYOSHI;UEDA DAISUKE |
分类号 |
H01L31/058;H01L27/146;H04N5/335;H04N5/367;H04N5/369;H04N5/374 |
主分类号 |
H01L31/058 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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