发明名称 Multilayered interconnect structure and method for fabricating the same
摘要 In the multilayered interconnect structure, an upper-layer interconnect is formed in an interlayer dielectric film formed on a lower-layer interconnect of copper, and the lower-layer interconnect and the upper-layer interconnect of copper are connected to each other through a via formed in the interlayer dielectric film. A layer of the interlayer dielectric film in contact with the lower-layer interconnect is made of a layer including, as a principal component, an aromatic compound containing a nitrogen atom having a lone pair of electrons in an aromatic ring.
申请公布号 US7696627(B2) 申请公布日期 2010.04.13
申请号 US20060665474 申请日期 2006.03.30
申请人 PANASONIC CORPORATION 发明人 AOI NOBUO
分类号 H01L29/40 主分类号 H01L29/40
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