发明名称 |
Circuit pattern inspection apparatus |
摘要 |
The via chain conduction failure due to non-conduction caused by insufficient etching in a contact plug/via plug forming process can be detected precisely in a short time. For its achievement, a defect is detected at high speed by taking advantage of characteristics of a potential contrast method using a via chain defect inspection structure and an electron beam defect detection apparatus which can perform continuous inspection while changing an inspection direction without rotating a wafer. Accordingly, the capturing efficiency of a critical electric defect and search efficiency of a defect point can be improved.
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申请公布号 |
US7696487(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20060594985 |
申请日期 |
2006.11.09 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION;RENESAS TECHNOLOGY CORP. |
发明人 |
HAYAKAWA KOICHI;INOUE JIRO;NOJIRI MASAAKI |
分类号 |
G01K1/08;H01J3/14 |
主分类号 |
G01K1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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