| 摘要 |
PURPOSE: A display device is provided to reduce manufacturing costs by forming a thin film transistor using an oxide semiconductor and to reduce the number of a contact hole by directly connecting a gate electrode, a source wiring, and a drain wiring which are used for a driver circuit. CONSTITUTION: A first oxide semiconductor layer(405) and a second oxide semiconductor layer(407) are formed on a gate isolation layer(403). A first channel protective layer(418) is close to the first oxide semiconductor layer. A second channel protective layer(419) is close to the second oxide semiconductor layer. A first wiring(409) and a second wiring(410) are formed on the first oxide semiconductor layer. The second wiring is directly connected to a second gate electrode(402) through a contact hole(404) of the gate isolation layer. A third wiring(411) is formed on the second oxide semiconductor layer. |
