发明名称 Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor
摘要 What is provided is a method and an apparatus for easily forming a multilayer structure of conductive metal thin films while forming a metal oxide thin film regardless of the conductivity of a substrate. A thin film of conductive metal is laminated by: dissolving metal precursors for a metal oxide to be formed and an oxidant to oxidize the metal precursors in a supercritical fluid or subcritical fluid; forming a metal oxide thin film by an oxidation reaction on the surface of a substrate in the supercritical fluid or subcritical fluid; then, dissolving a reducing agent and conductive metal precursors in a supercritical fluid or subcritical fluid; while reducing the metal oxide thin film formed on the surface of the substrate to a metal thin film, reducing the conductive metal precursors on the reduced metal thin film.
申请公布号 US7695760(B2) 申请公布日期 2010.04.13
申请号 US20050628327 申请日期 2005.06.01
申请人 YAMANASHI UNIVERSITY 发明人 KONDO EIICHI
分类号 B05D5/12;B05C11/02;C23C16/06;C23C16/40;H01L21/02;H01L21/288;H01L21/3205 主分类号 B05D5/12
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