发明名称 |
Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor |
摘要 |
What is provided is a method and an apparatus for easily forming a multilayer structure of conductive metal thin films while forming a metal oxide thin film regardless of the conductivity of a substrate. A thin film of conductive metal is laminated by: dissolving metal precursors for a metal oxide to be formed and an oxidant to oxidize the metal precursors in a supercritical fluid or subcritical fluid; forming a metal oxide thin film by an oxidation reaction on the surface of a substrate in the supercritical fluid or subcritical fluid; then, dissolving a reducing agent and conductive metal precursors in a supercritical fluid or subcritical fluid; while reducing the metal oxide thin film formed on the surface of the substrate to a metal thin film, reducing the conductive metal precursors on the reduced metal thin film.
|
申请公布号 |
US7695760(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20050628327 |
申请日期 |
2005.06.01 |
申请人 |
YAMANASHI UNIVERSITY |
发明人 |
KONDO EIICHI |
分类号 |
B05D5/12;B05C11/02;C23C16/06;C23C16/40;H01L21/02;H01L21/288;H01L21/3205 |
主分类号 |
B05D5/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|