| 摘要 |
A non-volatile storage element disposed at an integrated circuit is disclosed. The storage element includes a first resistive element having a first magnetic tunnel junction (MTJ) element, a first node coupled to the first resistive element, a second resistive element having of a second MTJ element, a second node coupled to the second resistive element, a sense amplifier having a first input coupled to the first node, a second input coupled to the second node, and an output, and a first conductor disposed to conduct a first current to set the first resistive element to a first resistive value and the second resistive element to a second resistive value different from the first resistive value.
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