发明名称 |
Polishing compound for semiconductor integrated circuit device, polishing method and method for producing semiconductor integrated circuit device |
摘要 |
To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.
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申请公布号 |
US7695345(B2) |
申请公布日期 |
2010.04.13 |
申请号 |
US20070863852 |
申请日期 |
2007.09.28 |
申请人 |
ASAHI GLASS COMPANY, LIMITED;AGC SEIMI CHEMICAL CO., LTD. |
发明人 |
YOSHIDA IORI;KON YOSHINORI |
分类号 |
B24B1/00;B24B37/00;H01L21/302;H01L21/304 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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