| 摘要 |
A method for manufacturing a GaN semiconductor light-emitting element is provided. The method for manufacturing a GaN semiconductor light-emitting element includes forming, by crystal growth, a first GaN compound semiconductor layer of a first conductivity type, the top face of which corresponds to the A plane, an active layer composed of InxGa(1−x)N, the top face of which corresponds to the A plane, and a second GaN compound semiconductor layer of a second conductivity type, the top face of which corresponds to the A plane, in that order on a base which is a nonpolar plane, wherein the active layer is formed at a crystal growth rate of 0.3 nm/sec or more.
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