发明名称 Semiconductor device comprising a memory portion and a peripheral circuit portion
摘要 The present invention provides a semiconductor chip that provides a semiconductor device with high reliability and low leak current, and a method of manufacturing such a semiconductor chip, and more specifically, provides a semiconductor chip comprising memory portions and a peripheral circuit portion, where the memory portions and the peripheral circuit portion are formed in a main surface portion of the semiconductor chip, a thickness of the sections of the semiconductor chip passing through the main surface portion in which the memory portions are formed is larger than a thickness of sections of the semiconductor chip passing through the main surface portion in which the peripheral circuit portion is formed, and a method of manufacturing such a semiconductor chip.
申请公布号 US7696609(B2) 申请公布日期 2010.04.13
申请号 US20050290509 申请日期 2005.12.01
申请人 ELPIDA MEMORY, INC. 发明人 OYU KIYONORI
分类号 H01L23/58 主分类号 H01L23/58
代理机构 代理人
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