| 摘要 |
A two level microbridge infrared thermal detector having an upper detector planar section (a) comprising a temper-ature responsive detector of an oxide of vanadium having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet resistance, and (b) being supporter above a lower section by leg portions of an oxide of vanadium having a resistivity of approximately 500 ohms per square sheet resistance.
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