| 摘要 |
<p>PURPOSE: Multiferroic material and a manufacturing method thereof are provided to gradually reduce the size of magnetic field inducing dielectric polarization, to control the size of the dielectric polarization, and to be used in a memory device field and a magnetic field sensor field. CONSTITUTION: Multiferroic material includes hexaferrite in which a magnetic iron ion is partly substituted for a non-magnetic ion. The non-magnetic ion changes magnetic anisotropy of the hexaferrite. The non-magnetic ion is aluminum ion. The substitution ratio of the non-magnetic ion is bigger than 0 and is 80% or less. Dielectric polarization is generated in the magnetic field which is bigger than 0 and is less than 10mT. A method for manufacturing the multiferroic material comprises the following steps: preparing powders of barium carbonate, strontium carbonate, zinc oxide, ferric oxide, aluminum oxide, and sodium oxide; heat-treating the powders; and slowly annealing the powders for crystallization.</p> |
