| 摘要 |
PURPOSE: A CMOS device and a method for manufacturing the same are provided to prevent the polysilicon depletion effect of a PMOS transistor using a p-type metal layer as a gate electrode. CONSTITUTION: A gate insulation layer(24) is formed on a semiconductor substrate(21). A p-type metal layer(27) is formed on the gate insulation layer. The work function of the p-type metal layer is between 4.9 to 5.2 eV. The p-type metal layer includes one of Pt, Ru, Au, Ag, Mo, MoN or TiNi. The gate electrode of an NMOS transistor is an n-type polysilicon layer(25). The gate electrode of the PMOS transistor is the p-type metal layer.
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