| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce off leakage current at the standby off state by generating an internal voltage according to an enable signal generated by an enable signal generator. CONSTITUTION: An enable signal generator(1) receives a plurality of address decoding signals. The enable signal generator generates a first enable signal(VPPCEN<1>) for selecting a first cell block. The enable signal generator generates a second enable signal(VPPCEN<2>) for selecting a second cell block. An internal voltage generator(2) generates an internal voltage by determining whether a first power is supplied according to the first or second enable signal. The first cell block and the second cell block share a bit line and a sense amplifier.
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