METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the loss of substrate surface using a double spacer etching process which includes a first and a second etching processes for a spacer etching process. CONSTITUTION: A plurality of gates is formed on a substrate(11). A gate re-oxide layer(16) is formed on the exposed substrate. Spacer insulation layers(17, 17A) are formed on the front side of a structure which includes the gate re-oxide layer. A pre-set thickness of the space insulation layer is etched in a first etching process. The remained spacer insulation layer and the gate re-oxide layer are etched in a second etching process. A gate spacer is formed on the both sidewall of the gate. The substrate besides the gate is exposed. An epitaxial layer is formed on the exposed substrate.